Spreading thermal resistance of the heat-sink of a light-emitting diodeNAKWASKI, W.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 823-824, issn 0038-1101Article

The relation between the correction factor and the local slope in spreading resistanceALBERS, J.Journal of the Electrochemical Society. 1983, Vol 130, Num 10, pp 2076-2080, issn 0013-4651Article

Incorporation of a resistivity-dependent contact radius in an accurate integration algorithm for spreading resistance calculationsPIESSENS, R; VANDERVORST, W. B; MAES, H. E et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 468-474, issn 0013-4651Article

The relation between two-probe and four-probe resistances on nonuniform structuresALBERS, J; BERKOWITZ, H. L.Journal of the Electrochemical Society. 1984, Vol 131, Num 2, pp 392-398, issn 0013-4651Article

CALCULATION OF SPREADING RESISTANCE CORRECTION FACTORSHU SM.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 809-817; BIBL. 7 REF.Serial Issue

ON THE CALCULATION OF SPREADING RESISTANCE CORRECTION FACTORS.CHOO SC; LEONG MS; KUAN KL et al.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 561-565; BIBL. 8 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY. SPREADING RESISTANCE SYMPOSIUM. PROCEEDINGS; GAITHERSBURG, MD.; 1974.1974; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1974; NO 400-10; PP. (290P.); BIBL. 2 P. 1/2Conference Paper

Topside release of atomic force microscopy probes with molded diamond tipsFOUCHIER, M; EYBEN, P; JAMIESON, G et al.Microelectronic engineering. 2005, Vol 78-79, pp 73-78, issn 0167-9317, 6 p.Conference Paper

Two-dimensional aluminum diffusion in silicon : experimental results and simulationsGALVAGNO, G; LA VIA, F; SAGGIO, M. G et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 5, pp 1585-1590, issn 0013-4651Article

An efficient numerical scheme for spreading resistance calculations based on the variational methodCHOO, S. C; LEONG, M. S; SIM, J. H et al.Solid-state electronics. 1983, Vol 26, Num 8, pp 723-730, issn 0038-1101Article

THE RESISTANCE OF AN INFINITE SLAB WITH A DIX ELECTRODE AS A MIXED BOUNDARY VALUE PROBLEM.LEONG MS; CHOO SC; TAY KH et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 397-401; BIBL. 16 REF.Article

RESOLUTION OF SPREADING-RESISTANCE MEASUREMENTS ON SHALLOW LAYERSABBASI SA; BRUNNSCHWEILER A.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 290-292; BIBL. 4 REF.Article

SIMPLE S-PARAMETER MEASUREMENT OF BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 6; PP. 18-20; BIBL. 4 REF.Article

A MULTILAYER CORRECTION SCHEME FOR SPREADING RESISTANCE MEASUREMENTS.CHOO SC; LEONG MS; HONG HL et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 839-848; BIBL. 10 REF.Article

SPREADING RESISTANCE CALCULATIONS FOR GRADED STRUCTURES BASED ON THE UNIFORM FLUX SOURCE BOUNDARY CONDITION.LEONG MS; CHOO SC; WANG CC et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 255-264; BIBL. 13 REF.Article

MESURE DE LA RESISTANCE DIFFUSE DU COLLECTEUR DU TRANSISTOR BIPOLAIREPIETRENKO W; WILAMOWSKI BM.1976; ROZPR. ELEKTROTECH.; POLSKA; DA. 1976; VOL. 22; NO 4; PP. 803-812; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 8 REF.Article

COMPARISON OF NOISE-MEASURED AND THEORETICAL VALUE OF BASE SPREADING RESISTANCE FOR AN INTERDIGITATED TRANSISTOR.KNOTT KF; UNWIN RT.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 7; PP. 147-148; BIBL. 6 REF.Article

IMPURITY PROFILES WITHIN A SHALLOW P-N JUNCTION BY A NEW DIFFERENTIAL SPREADING RESISTANCE METHOD.KUDOH O; UDA K; IKUSHIMA Y et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 11; PP. 1751-1754; BIBL. 16 REF.Article

COMPARISON OF METHODS USED FOR DETERMINING BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 53-61; BIBL. 32 REF.Article

REPROCESSING OF DATA FROM SPREADING-RESISTANCE MEASUREMENTSVAN LINSCHOTEN J; SNIJDER J; HILLEN MW et al.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 100-103; BIBL. 5 REF.Article

HIGH SPEED IMPLEMENTATION AND EXPERIMENTAL EVALUATION OF MULTILAYER SPREADING RESISTANCE ANALYSISD'AVANZO DA; RUNG RD; GAT A et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1170-1176; BIBL. 20 REF.Article

Clustering of ultra-low-energy implanted boron in silicon during activation annealingSCHROER, E; PRIVITERA, V; PRIOLO, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 219-223, issn 0921-5107Conference Paper

Si_1-x Ge_x structures fabricated by focused ion beam implantationGANETSOS, T; TSAMAKIS, D; PANKNIN, D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.109-Pr3.112, issn 1155-4339Conference Paper

ULSI device characterization using nano-SRPDE WOLF, P; TRENKLER, T; CLARYSSE, T et al.SPIE proceedings series. 1997, pp 92-101, isbn 0-8194-2765-9Conference Paper

Spreading resistance of a round ohmic contactGELMONT, B; SHUR, M.Solid-state electronics. 1993, Vol 36, Num 2, pp 143-146, issn 0038-1101Article